inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor BUZ100 description static drain-source on-resistance : r ds(on) = 0.018 (max) dv/dt rated ultra low on-resistance 175 operating temperature applications high current , high speed switching solenoid and relay drivers dc-dc & dc-ac converters absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 50 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=37 60 a p tot total dissipation@tc=25 250 w t j max. operating junction temperature -55~175 t stg storage temperature range -55~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.6 /w r th j-a thermal resistance,junction to ambient 75 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor BUZ100 electrical characteristics (t c =25 ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 50 v v gs(th) gate threshold voltage v ds = v gs ; i d = 1ma 2.1 4 v r ds(on) drain-source on-stage resistance v gs = 10v; i d = 60a 0.018 i gss gate source leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 50v; v gs = 0 1 ua v sd diode forward voltage i f = 120a; v gs = 0 1.8 v pdf pdffactory pro www.fineprint.cn
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